A Novel Oxygen Vacancy in ScPO <sub>4</sub> :Er for Luminescence Anti‐Thermal Quenching
Hao Song, Hui Wang, Junhe Zhou, Chenyi Wang, Yilin Wang, Hongyu Wang, Xiaobin Tang, Chunxian Tao, Qiuqiang Zhan, Jianhua Liu, Ling Huang
Abstract
Abstract Different from previously reported shallow defects in ScPO 4 , herein we have uncovered a deep defect, oxygen vacancy ( V O ). The perfect energy level match with 4 S 3/2 / 4 F 9/2 in doped Er 3+ allows V O to accept and store the excitation energy transferred from Er 3+ , which is then released and back‐transferred to Er 3+ upon heating, and finally leads to significant luminescence anti‐thermal quenching (LATQ). Moreover, the concentration of V O can be adjusted by simple atmospheric annealing, which allows modulation of V O → Er 3+ energy transfer for adjustable LATQ in ScPO 4 :Er, i.e., downshifting LATQ up to 843 K and upconversion LATQ till a record‐high temperature of 1323 K, and thus unparalleled performance of the classic compound ScPO 4 :Er in thermophotovoltaics (TPV) and dual‐mode luminescence thermometers.