Seebeck-induced anomalous Nernst effect in van der Waals MnBi<sub>2</sub>Te<sub>4</sub> layers
Yume Morishima, Naoya Yamaguchi, Hikaru Sawahata, Fumiyuki Ishii
Abstract
Abstract Magnetic semiconductors with an anomalous Hall conductivity σ xy ≠ 0 near the Fermi energy are expected to have a large anomalous Nernst coefficient N owing to the Seebeck term, which is the product of the Hall angle ratio and Seebeck coefficient. In this study, we examined the typical cases of ∣ N ∣ ≥ 20 μ V K –1 in the ferrimagnetic phase of semiconducting van der Waals layers MnBi 2 Te 4 using first-principles calculations. A large enhancement in ∣ N ∣ was obtained by the Seebeck term for a wide range of carrier concentrations. The present results motivate further studies on the anomalous Nernst effect in intrinsically or doped magnetic semiconductors.
Topics & Concepts
Nernst effectSeebeck coefficientCondensed matter physicsNernst equationThermoelectric effectFerrimagnetismvan der Waals forceHall effectMaterials scienceSemiconductorMagnetic semiconductorElectrical resistivity and conductivityDopingChemistryMagnetic fieldPhysicsMagnetizationThermodynamicsElectrodeOptoelectronicsQuantum mechanicsPhysical chemistryMoleculeOrganic chemistryTopological Materials and PhenomenaQuantum and electron transport phenomenaAdvanced Thermoelectric Materials and Devices