Theoretical prediction of valley spin splitting in two-dimensional Janus MSiGeZ<sub>4</sub> (M = Cr and W; Z = N, P, and As)
Ying Li, Mengxian Lan, Suen Wang, Tian Huang, Yu Chen, Hong Wu, Feng Li, Yong Pu
Abstract
Valley spin splitting value of WSiGeZ 4 (Z = N, P, and As) can reach more than 400 meV. The Berry curvature of 2D Janus WSiGeP 4 and WSiGeAs 4 is as high as 300 Bohr 2 . In addition, its bandgap and valley spin splitting can be modulated by the strain engineering.
Topics & Concepts
JanusCondensed matter physicsBand gapBerry connection and curvatureSpin (aerodynamics)ValleytronicsSemiconductorCoupling (piping)Narrow-gap semiconductorElectronAtom (system on chip)PhysicsDirect and indirect band gapsMaterials scienceNanotechnologySpintronicsQuantum mechanicsGeometric phaseThermodynamicsEmbedded systemMetallurgyComputer scienceFerromagnetism2D Materials and ApplicationsMXene and MAX Phase MaterialsBoron and Carbon Nanomaterials Research