Progressing -190 °C to +500 °C Durable SiC JFET ICs From MSI to LSI
Philip G. Neudeck, David J. Spry, Michael J. Krasowski, L. Chen, Norman F. Prokop, Lawrence C. Greer, Chien-Min Chang
Abstract
This invited paper describes prototype SiC JFET integrated circuit (IC) and packaging technology that has produced arguably the most harsh-environment durable electronics ever demonstrated. Prototype medium-scale integration (MSI) ICs fabricated by NASA Glenn Research Center have successfully operated for over 1 year in 500 °C air-ambient, over 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber, from -190 °C to +812 °C, and radiation exposure through 7 MRad(Si) total ionizing dose and 86 MeV-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /mg heavy ion strikes. Recent on-going work focused on upscaling this “go anywhere” IC capability from MSI to large-scale integration (LSI) prototype via benchmark memory ICs is described.