High-Performance Photodetectors With Polarization Sensitivity Based on p-n and p-p<sup>+</sup> Black Phosphorus/Germanium Heterojunctions
Maolong Yang, Tian Miao, Qing Mi, Yao Lu, Ningning Zhang, Maliang Liu, Hui Guo, Tao Liu, Huiyong Hu, Liming Wang
Abstract
The heterostructures between atomically thin 2-D and 3-D semiconductors show great potential for high-performance photodetector. In this work, the efficient light detection of the p-n and p-p+ black phosphorus (bP)/germanium (Ge) heterojunction photodiode has been demonstrated. With the change of Ge doping type, the rectification direction of the heterojunction diode formed by bP and Ge could be reversed. Due to the enhanced photocarrier separation at the reverse bias, the bP/n-Ge (bP/p-Ge) device has a responsivity of 6.08 (3.43) A/W under 1550-nm illumination, with fast response speed in the 10- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{s}$ </tex-math></inline-formula> level. The bP/n-Ge device has a significant photovoltaic effect due to the small conduction band energy offset, with a large open-circuit voltage of 0.34 V. Under the illumination of light with different polarization directions, the device exhibits apparent polarization-sensitive detection, and the dichroic ratio of bP/n-Ge and bP/p-Ge devices is 4.25 and 3.85, respectively. These results suggest that the bP/Ge heterojunction photodetector would have great potential in high-performance, self-powered, and polarization-sensitive photodetection.