Layer-dependent switching and photodetection in two-dimensional <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>In</mml:mi><mml:mi mathvariant="normal">Se</mml:mi></mml:math> transistors
Lin Li, Peize Yuan, Zinan Ma, Mengjie He, Yurong Jiang, Tianxing Wang, Xueping Li, Congxin Xia
Abstract
The two-dimensional layered material-based multifunctional transistors are expected to be core devices in the post-Moore era. However, the relationship between layer thickness and device performance remains unclear. Here, we design the layer $\mathrm{In}\mathrm{Se}$ transistors integrating switching and photodetection functions, exhibiting the fast-switching time and high responsivity when choosing the layer numbers of 2 and 3. Additionally, the maximum photoresponsivity and external quantum efficiency reach up to 0.29 A/W and 136.4% at the wavelength of 310 nm, respectively. The layer-number changing also induces 2 orders of magnitude improvement in and delay time. The dependence between layer number and device performance can provide a basis for designing multifunctional devices.