A stable monoclinic variant and resultant robust ferroelectricity in single-crystalline hafnia-based films
Wan‐Rong Geng, Yujia Wang, Yin‐Lian Zhu, Sirui Zhang, Huiqin Ma, Yun‐Long Tang, Tuo Shi, Xiuliang Ma
Abstract
The ferroelectricity in nanoscale HfO2-based films enables their applications more promising than that of the perovskite oxides, taking into account the easy compatibility with the modern silicon-based semiconductor technology. However, the well-known polar orthorhombic phase is thermodynamically metastable, making the applications of HfO2-based ferroelectrics challenging in terms of uncontrollability and consequently instability of the physical performance in electronic devices. Here we report the robust ferroelectricity in stable monoclinic Hf0.5Zr0.5O2 single-crystalline films, which was known as non-polar before. The as-prepared films display high endurance performance of wake-up free and non-fatigue behavior up to 1012 cycles. Multimode imaging under aberration-corrected scanning transmission electron microscopy reveals that such an unexpected ferroelectric behavior is resultant from an antiphase boundaries-derived monoclinic polar variant (space group, Pc) intergrown with the nonpolar monoclinic phase (P21/c). The switching barrier for the stable polar variant is only 20~50% of that for the metastable orthorhombic phase according to the calculation by the nudged elastic band method. These findings provide a practical approach for designing robust ferroelectricity in hafnia-based materials and would be helpful for the development of lower energy-cost and long-life memory devices compatible with integrated circuit technology. The authors observe robust ferroelectricity, characterized by a wake-up-free effect and endurance up to 1012 cycles, in monoclinic Hf0.5Zr0.5O2 single-crystalline films. This ferroelectric behavior originates from a polar monoclinic variant (space group Pc) stabilized by antiphase boundaries.