Organic near‐infrared photodetectors with photoconductivity‐enhanced performance
Siwei Zhang, Zhenlong Li, Jingzhou Li, Bingzhe Wang, Fang Chen, Xubiao Li, Shunjie Liu, Jacky W. Y. Lam, Guichuan Xing, Jiangyu Li, Zheng Zhao, Feiyu Kang, Guodan Wei, Ben Zhong Tang
Abstract
Abstract Organic near‐infrared (NIR) photodetectors with essential applications in medical diagnostics, night vision, remote sensing, and optical communications have attracted intensive research interest. Compared with most conventional inorganic counterparts, organic semiconductors usually have higher absorption coefficients, and their thin active layer could be sufficient to absorb most incident light for effective photogeneration. However, due to the relatively poor charge mobility of organic materials, it remains challenging to inhibit the photogenerated exciton recombination and effectively extract carriers to their respective electrodes. Herein, this challenge was addressed by increasing matrix conductivities of a ternary active layer (D–A–D structure NIR absorber [2TT‐oC6B]:poly(N,N′‐bis‐4‐butylphenyl‐N,N′‐bisphenyl)benzidin [PolyTPD]:[6,6]‐phenyl‐C 61 ‐butyric acid methyl ester [PCBM] = 1:1:1) upon in situ incident light illumination, significantly accelerating charge transport through percolated interpenetrating paths. The greatly enhanced photoconductivity under illumination is intrinsically related to the unique donor–acceptor molecular structures of PolyTPD and 2TT‐oC6B, whereas stable intermolecular interaction has been verified by systematic molecular dynamics simulation. In addition, an ultrafast charge transfer time of 0.56 ps from the NIR aggregation‐induced luminogens of 2TT‐oC6B absorber to PolyTPD and PCBM measured by femtosecond transient absorption spectroscopy is beneficial for effective exciton dissociation. The solution‐processed organic NIR photodetector exhibits a fast response time of 83 μs and a linear dynamic range value of 111 dB under illumination of 830 nm. Therefore, our work has opened up a pioneering window to enhance photoconductivity through in situ photoirradiation and benefit NIR photodetectors as well as other optoelectronic devices.