In-Plane Ferrielectric Order in van der Waals β′-In<sub>2</sub>Se<sub>3</sub>
Lin Wang, Xin Zhou, Mengyao Su, Yishu Zhang, Runlai Li, Rongrong Zhang, Xiao Wu, Zhenyue Wu, Walter P. D. Wong, Qing‐Hua Xu, Qian He, Kian Ping Loh
Abstract
van der Waals ferroic materials exhibit rich potential for implementing future generation functional devices. Among these, layered β′-In 2 Se 3 has fascinated researchers with its complex superlattice and domain structures. As opposed to ferroelectric α-In 2 Se 3, the understanding of β′-In 2 Se 3 ferroic properties remains unclear because ferroelectric, antiferroelectric, and ferroelastic characteristics have been separately reported in this material. To develop useful applications, it is necessary to understand the microscopic structural properties and their correlation with macroscopic device characteristics. Herein, using scanning transmission electron microscopy (STEM), we observed that the arrangement of dipoles deviates from the ideal double antiparallel antiferroelectric character due to competition between antiferroelectric and ferroelectric structural ordering. By virtue of second-harmonic generation, four-dimensional STEM, and in-plane piezoresponse force microscopy, the long-range inversion-breaking symmetry, uncompensated local polarization, and net polarization domains are unambiguously verified, revealing β′-In 2 Se 3 as an in-plane ferrielectric layered material. Additionally, our device study reveals analogous resistive switching behaviors of different types owing to polarization switching, defect migration, and defect-induced charge trapping/detrapping processes.