Band gap and gate underlap engineered novel Si0.2Ge0.8/GaAs JLTFET with dual dielectric gate for improved wireless applications
Kaushal Kumar, Ajay Kumar, Vinay Kumar, S. C. Sharma
Topics & Concepts
Ambipolar diffusionTransconductanceMaterials scienceDielectricOptoelectronicsGate dielectricIonBand gapElectrical engineeringPlasmaTransistorPhysicsEngineeringVoltageQuantum mechanicsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignFerroelectric and Negative Capacitance Devices