Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis
M.J. Madito, T.T. Hlatshwayo, C. Mtshali
Topics & Concepts
Homonuclear moleculeMaterials scienceRaman spectroscopyAmorphous solidIonIon implantationHeteronuclear moleculeFluenceWaferAnalytical Chemistry (journal)CrystallographyNanotechnologyChemistryOpticsMoleculePhysicsChromatographyOrganic chemistrySilicon Carbide Semiconductor TechnologiesThin-Film Transistor TechnologiesIon-surface interactions and analysis