Epitaxial Growth of (−201) β-Ga<sub>2</sub>O<sub>3</sub> on (001) Diamond Substrates
Arpit Nandi, D. Cherns, Indraneel Sanyal, Martin Kuball
Abstract
High Resolution Image Download MS PowerPoint Slide Heteroepitaxial growth of β-Ga 2 O 3 on (001) diamond by metal–organic chemical vapor deposition (MOCVD) is reported. A detailed study was performed with Transmission Electron Microscopy (TEM) elucidating the epitaxial relation of (−201) β-Ga 2 O 3 ||(001) diamond and [010]/[−13–2] β-Ga 2 O 3 ||[110]/[1–10] diamond, with the presence of different crystallographically related epitaxial variants apparent from selected area diffraction patterns. A model explaining the arrangement of atoms along ⟨110⟩ diamond is demonstrated with a lattice mismatch of 1.03–3.66% in the perpendicular direction. Dark field imaging showed evidence of arrays of discrete defects at the boundaries between different grains. Strategies to reduce the density of defects are discussed.