Harnessing a WO<sub><i>x</i></sub>-based flexible transparent memristor synapse with a hafnium oxide layer for neuromorphic computing
Debashis Panda, Yu-Fong Hui, Tseung‐Yuen Tseng
Abstract
interface to realize the switching mechanism. The thicknesses of the different layers are estimated from the high-resolution transmission electron microscopy observations. The fabricated device exhibits 92.2% transparency, as confirmed by the UV-Vis spectrum.
Topics & Concepts
Neuromorphic engineeringMemristorMaterials scienceTransmission (telecommunications)Layer (electronics)Resistive random-access memoryOxideSynapseComputer scienceOptoelectronicsComputer architectureNanotechnologyElectronic engineeringElectrical engineeringArtificial neural networkEngineeringTelecommunicationsArtificial intelligenceNeuroscienceMetallurgyVoltageBiologyAdvanced Memory and Neural ComputingPhotoreceptor and optogenetics researchNeuroscience and Neural Engineering