Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain
Haiyong Wang, Wei Mao, Shenglei Zhao, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao
Topics & Concepts
Ohmic contactHigh-electron-mobility transistorMaterials scienceOptoelectronicsBreakdown voltageGallium nitrideReverse leakage currentLeakage (economics)Threshold voltageTransistorWide-bandgap semiconductorVoltageLayer (electronics)Electrical engineeringNanotechnologyDiodeMacroeconomicsEngineeringSchottky barrierEconomicsGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties