Systematic investigation of the growth kinetics of <b> <i>β</i> </b>-Ga2O3 epilayer by plasma enhanced chemical vapor deposition
Chao Wu, Daoyou Guo, L. Y. Zhang, P. G. Li, Fabi Zhang, Chee‐Keong Tan, Sen Wang, Anxing Liu, Fengmin Wu, Weihua Tang
Abstract
β-Ga2O3 has attracted much attention due to its ultrawide-bandgap (∼4.9 eV) with a high breakdown field (8 MV/cm) and good thermal/chemical stability. In order for β-Ga2O3 to be used in electronic and optoelectronic devices, epitaxial growth technology of thin films should be given priority. However, challenges are associated with the trade-off growth rate with crystallization and surface roughness in conventional epitaxy. Herein, plasma enhanced chemical vapor deposition was used to grow the β-Ga2O3 epilayer, and the growth kinetics process has been systematically investigated. A high growth rate of ∼0.58 μm/h and a single 2¯01 plane orientation with a full width at half maximum value of 0.86° were obtained when grown on the c-plane sapphire substrate at the growth temperature of 820 °C. Then, a proposed model for the mechanism of nucleation and growth of β-Ga2O3 epitaxial films is established to understand the precursor transport and gas phase reaction process. This work provides a cheap, green, and efficient epitaxial growth method, which is indispensable for device applications of β-Ga2O3.