A Large Bandgap Organic Salt Dopant for Sn‐Based Perovskite Thin‐Film Transistor
Ji‐Young Go, Gwon Byeon, Taesu Choi, Shuzhang Yang, Wenwu Li, Yong‐Young Noh
Abstract
Abstract Metal halide perovskite optoelectronic devices have made significant progress over the past few years, but precise control of charge carrier density through doping is essential for optimizing these devices. In this study, the potential of using an organic salt, N , N ‐dimethylanilinium tetrakis(pentafluorophenyl)borate, as a dopant for Sn‐based perovskite devices, is explored. Under optimized conditions, the thin film transistors based on the doped 2D/3D perovskite PEAFASnI 3 demonstrate remarkable improvement in hole mobility, reaching 7.45 cm 2 V −1 s −1 with a low subthreshold swing and the smallest sweep hysteresis (Δ V hysteresis = 2.27 V) and exceptional bias stability with the lowest contact resistance (2.2 kΩ cm). The bulky chemical structure of the dopant prevents it from penetrating the perovskite lattice and also surface passivation against Sn oxidation due to its hydrophobic nature surface. This improvement is attributed to the bifunctional effect of the dopant, which simultaneously passivates defects and improves crystal orientation. These findings provide new insights into potential molecular dopants that can be used in metal halide perovskite devices.