Coexistence of volatile and non-volatile resistive switching characteristics in NbOx memristor regulated by electron irradiation-induced surface oxygen vacancies
Zhihu Dong, Libing Qian, Qifeng Li, Zhe Liu, Jiacheng Guo, Li Wang, Shan Wu, Rui Xiong, Yong Liu, Chunqing He
Topics & Concepts
MemristorIrradiationOxygenMaterials scienceOptoelectronicsResistive touchscreenElectron beam processingNanotechnologyChemistryElectrical engineeringPhysicsOrganic chemistryNuclear physicsEngineeringAdvanced Memory and Neural ComputingMachine Learning and ELMElectrochemical Analysis and Applications