Optical dipole-induced anisotropic growth of semiconductors: A facile strategy toward chiral and complex nanostructures
Xiaolin Lü, Xujie Wang, Yong Liu, Tao Ding
Abstract
Chiral nanostructures based on semiconductors exhibit pronounced properties of chiral luminescence and optoelectronic responses, which are fundamental for chiroptoelectronic devices. However, the state-of-the-art techniques of generating semiconductors with chiral configurations are poorly developed, most of which are complicated or of low yield, rendering low compatibility to the platform of optoelectronic devices. Here we show polarization-directed oriented growth of platinum oxide/sulfide nanoparticles based on optical dipole interactions and near-field-enhanced photochemical deposition. By rotating the polarization during the irradiation or employing vector beam, both three dimensional and planar chiral nanostructures can be obtained, which is extendable to cadmium sulfide. These chiral superstructures exhibit broadband optical activity with a g-factor of ~0.2 and a luminescence g-factor of ~0.5 in the visible, making them promising candidate for chiroptoelectronic devices.