Schottky Barrier Height Modulation of Zr/p-Diamond Schottky Contact by Inserting Ultrathin Atomic Layer-Deposited Al<sub>2</sub>O<sub>3</sub>
Juan Wang, Guoqing Shao, Genqiang Chen, Xiuliang Yan, Qi Li, Wangzhen Song, Yanfeng Wang, Zhangcheng Liu, Shuwei Fan, Chaoyang Zhang, Hongxing Wang
Abstract
We fabricated Zr/p-diamond Schottky barrier diodes (SBDs) with and without a ultrathin atomic layer-deposited Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interlayer. The effects of the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interlayer on the electrical properties of devices were investigated using the current–voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}-{V}$ </tex-math></inline-formula> ) and capacitance–voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${C}-{V}$ </tex-math></inline-formula> ) characteristics at room temperature. Compared with Zr/p-diamond SBDs without the interlayer, SBDs with a 2-nm-thick Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interlayer exhibited higher Schottky barrier height and breakdown voltage. The insertion of the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layer effectively reduced the interface state and it is considered that the barrier enhancement is attributed to the significant reduction of interface state density. This work provides a simple method to passivate the diamond surface and modulate the barrier heights of diamond SBDs.