Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays
Taewon Jin, Sanghyeon Kim, Jae‐Hoon Han, Dae‐Hwan Ahn, Seong Ui An, Tae Hyeon Noh, Xinkai Sun, Cheol Jun Kim, Juhyuk Park, Younghyun Kim
Abstract
(HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.
Topics & Concepts
Thin-film transistorMaterials scienceOptoelectronicsFerroelectricityTransistorStack (abstract data type)Threshold voltageLight intensityVoltageIntensity (physics)OpticsElectrical engineeringComputer scienceNanotechnologyEngineeringPhysicsLayer (electronics)DielectricProgramming languageFerroelectric and Negative Capacitance DevicesAdvanced Sensor and Energy Harvesting MaterialsAdvanced Memory and Neural Computing