Low-voltage and high-speed switching of a magnetoelectric element for energy efficient compute
Punyashloka Debashis, John J. Plombon, Chia‐Ching Lin, Yu-Ching Liao, Hai Li, Dmitri E. Nikonov, Dominique Adams, Carly Rogan, Mahendra DC, M. Radosavljević, Scott B. Clendenning, Ian A. Young
Abstract
150 mV voltage-driven switching of a ferromagnet (FM) exchange-coupled to 6-nm-thick lanthanum-doped BiFeO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> (LBFO) was demonstrated at room temperature (RT). Further, less than 2 ns 0%-90% switching of LBFO ferroelectric polarization was demonstrated through real-time oscilloscope measurements. These two results are respectively the lowest voltage magnetoelectric switching and the highest switching speed measured in LBFO, enabled by high quality epitaxial growth of ultra-thin LBFO/FM films. These results are key accomplishments for energy efficient computing as has been shown through circuit-level simulations of the magnetoelectric random access memory (ME-RAM) utilizing compact models calibrated to the experiments in this work.