A Roadmap for Ferroelectric–Antiferroelectric Phase Transition
Rujian Jiang, Yun‐Long Tang, Suzhen Liu, Mei‐Xiong Zhu, Changji Li, Yanpeng Feng, Feng‐Hui Gong, Jinghui Wang, Xiaodong Lv, Shuang-Jie Chen, Yujia Wang, Yin‐Lian Zhu, Xiuliang Ma
Abstract
Antiferroelectric materials have shown great potential in electronic devices benefiting from the reversible phase transition between ferroelectric and antiferroelectric phases. Understanding the dipole arrangements and clear phase transition pathways is crucial for design of antiferroelectric materials-based energy storage and conversion devices. However, the specific phase transition details remain largely unclear and even controversial to date. Here, we have grown a series of PbZrO 3 on SrTiO 3 substrates and elucidated the fine atom structures and phase transition pathways using atomic-resolution transmission electron microscopy. Specifically, a roadmap for ferroelectric to antiferroelectric phase transitions, here with increasing film thickness, is determined as ferroelectric rhombohedral ( R 3 c )–ferroelectric monoclinic ( Pc )–ferrielectric orthorhombic ( Ima 2)–antiferroelectric orthorhombic ( Pbam ), where Pc and Ima 2 phases act as structural bridges. Moreover, the phase transition pathway is strongly related to the synergistic effect of oxygen octahedral tilting and cation displacement. These findings provide an insightful understanding for the theories and related properties of antiferroelectrics.