Litcius/Paper detail

Heteroepitaxial growth of β-Ga2O3 thin films on c-plane sapphire substrates with β-(AlxGa1-x)2O3 intermediate buffer layer by mist-CVD method

Yaolin Cheng, Chunfu Zhang, Yu Xu, Zhe Li, Dazheng Chen, Weidong Zhu, Qian Feng, Shengrui Xu, Jincheng Zhang, Yue Hao

2021Materials Today Communications26 citationsDOI

Topics & Concepts

Materials scienceMistSapphireBuffer (optical fiber)Layer (electronics)Thin filmOptoelectronicsChemical vapor depositionChemical engineeringNanotechnologyOpticsTelecommunicationsEngineeringPhysicsMeteorologyLaserComputer scienceGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques
Heteroepitaxial growth of β-Ga2O3 thin films on c-plane sapphire substrates with β-(AlxGa1-x)2O3 intermediate buffer layer by mist-CVD method | Litcius