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Entropy Engineered Cubic n‐Type AgBiSe<sub>2</sub> Alloy with High Thermoelectric Performance in Fully Extended Operating Temperature Range

Huaxing Zhu, Ting Zhao, Bin Zhang, Zibing An, Shengcheng Mao, Guoyu Wang, Xiaodong Han, Xu Lu, Jiangwei Zhang, Xiaoyuan Zhou

2020Advanced Energy Materials87 citationsDOI

Abstract

Abstract Developing high performance n‐type thermoelectric (TE) materials is fundamentally important for developing high efficiency TE devices. AgBiSe 2 , which reveals superior n‐type TE performance in a cubic phase, crystallizes in a hexagonal phase at room temperature, and typically, undergoes phase transitions to a cubic phase at a temperature above 580 K. Here, for the first time, through entropy optimization with lead‐selenides (≥9.9 mol%), the high‐temperature cubic phase of AgBiSe 2 is stabilized from 300 to 800 K. Furthermore, the AgBiSe 2 ‐PbSe pseudo‐binary diagram is established. The resultant alloys with optimized entropy possess unique local distorted cubic lattices, which contribute low lattice thermal conductivity approaching 0.3 W m −1 K −1 in extended operating temperature range. Consequently, a peak figure of merit zT value of ≈0.8 at 800 K and a record‐high average zT value of 0.42 for n‐type I‐V‐VI 2 compounds are attained in pure phase cubic n‐type (AgBiSe 2 ) 1− x (PbSe) x solid solutions. These results pave the way for developing new TE materials via entropy engineering.

Topics & Concepts

Materials scienceThermoelectric effectCubic crystal systemAtmospheric temperature rangePhase diagramAlloyThermodynamicsHexagonal crystal systemFigure of meritThermal conductivityCondensed matter physicsPhase (matter)CrystallographyMetallurgyOptoelectronicsComposite materialPhysicsChemistryQuantum mechanicsAdvanced Thermoelectric Materials and DevicesPerfectionism, Procrastination, Anxiety StudiesChalcogenide Semiconductor Thin Films