Effect of the thickness of amorphous silicon carbide interlayer on the passivation of c-Ge surface by aluminium oxide films
Isidro Martín, Gema López, M. Garín, C. Voz, Pablo Ortega, Joaquim Puigdollers
Topics & Concepts
PassivationMaterials scienceAmorphous solidAluminiumCarbideAmorphous siliconSilicon carbideAluminium oxideOxideSiliconNanometreOptoelectronicsCrystalline siliconNanotechnologyMetallurgyComposite materialLayer (electronics)CrystallographyChemistrySilicon and Solar Cell TechnologiesIntegrated Circuits and Semiconductor Failure AnalysisThin-Film Transistor Technologies