Impact of temperature and interface trapped charges variation on the Analog/RF and linearity of vertically extended drain double gate Si0.5Ge0.5 source tunnel FET
Pallavi Kumari, Anand Raj, Kumari Nibha Priyadarshani, Sangeeta Singh
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Materials scienceLinearityOptoelectronicsLeakage (economics)Trap (plumbing)IonInterface (matter)VoltageElectrical engineeringChemistryPhysicsEngineeringEconomicsComposite materialCapillary numberMacroeconomicsMeteorologyCapillary actionOrganic chemistrySemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignIntegrated Circuits and Semiconductor Failure Analysis