Mobile intrinsic point defects for conductive neutral domain walls in LiNbO <sub>3</sub>
Kristoffer Eggestad, Benjamin A. D. Williamson, Dennis Meier, Sverre M. Selbach
Abstract
and the significant calculated mobility of O and Li vacancies suggest that thermal annealing and applied electric fields can be used experimentally to control point defect populations, and thus enable rewritable pn-junctions.
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