Simultaneous Optical Tuning of Hole and Electron Transport in Ambipolar WSe<sub>2</sub> Interfaced with a Bicomponent Photochromic Layer: From High‐Mobility Transistors to Flexible Multilevel Memories
Haixin Qiu, Zhaoyang Liu, Yifan Yao, Martin Herder, Stefan Hecht, Paolo Samorı́
Abstract
Abstract The interfacing of 2D materials (2DMs) with photochromic molecules provides an efficient solution to reversibly modulate their outstanding electronic properties and offers a versatile platform for the development of multifunctional field‐effect transistors (FETs). Herein, optically switchable multilevel high‐mobility FETs based on few‐layer ambipolar WSe 2 are realized by applying on its surface a suitably designed bicomponent diarylethene (DAE) blend, in which both hole and electron transport can be simultaneously modulated for over 20 cycles. The high output current modulation efficiency (97% for holes and 52% for electrons) ensures 128 distinct current levels, corresponding to a data storage capacity of 7 bit. The device is also implemented on a flexible and transparent poly(ethylene terephthalate) substrate, rendering 2DM/DAE hybrid structures promising candidates for flexible multilevel nonvolatile memories.