Electrical properties, conduction mechanisms, and voltage dependent curves of interface traps, series resistance in Au/(Sn:Fe2O3)/n-Si structures using impedance measurements
A. Baştuğ, A. Khalkhali, Sevda Sarıtaş, Mert Yıldırım, Ç. Ş. Güçlü, Ş. Altındal
Abstract
Abstract In this work, electrical properties in the constructed Au/(Sn:Fe 2 O 3 )/n-Si (MIS/MOS) structures have been analyzed using impedance-spectroscopy model (ISM) in wide range frequency and voltage to get more accuracy and reliable results on the electrical parameters, interface traps (N ss or D it ) and conduction mechanisms. The doping donor-atoms (N d ), diffusion-potential (V d ), barrier-height (Φ b ), depletion layer width (W D ) was calculated from the slope/intercept of the C −2 -V plots for various frequencies. The N ss and their life/relaxation times (τ) versus voltage profiles was extracted from conductance technique. The observed some changes in these-parameters were explained by the interlayer, R s , N ss polarization. However, while the N ss and Maxwell–Wegner polarization are usually dominate in inversion and depletion zones at lower-frequencies, R s and interlayer dominate only at accumulation zone at higher-frequencies. The R s vs V curves for various frequency were also extracted from the Nicollian & Brews technique. The obtained results are indicated that the interlayer, N ss , and polarization are more dominate on the ISM which is considering in calculation of electrical features.