Effect of GaN cap layer on the performance of AlInN/GaN-based HEMTs
Sujan Sarkar, Ramdas P. Khade, Amitava DasGupta, Nandita DasGupta
Topics & Concepts
Materials scienceHigh-electron-mobility transistorTransconductanceOptoelectronicsBreakdown voltageThreshold voltageGallium nitrideWide-bandgap semiconductorSaturation currentBarrier layerLayer (electronics)TransistorVoltageElectrical engineeringNanotechnologyEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties