Photosensitive resistive switching in parylene–PbTe nanocomposite memristors for neuromorphic computing
Andrey Trofimov, A. V. Emelyanov, А. Н. Мацукатова, Alexander A. Nesmelov, S. A. Zav’yalov, Т. Д. Пацаев, П. А. Форш, Gang Liu, V. V. Rylkov, В. А. Демин
Abstract
.) are evaluated with account of temporal and spatial variations. Additionally, the devices demonstrate a range of synaptic plasticity behaviors, such as spike-timing (amplitude, width)-dependent plasticity, long-term potentiation and depression. A qualitative model that describes photosensitive RS and takes into account the influence of photogenerated charge carriers on conductive filament growth is proposed based on the experimental results. This work presents an appealing approach towards the development of photosensitive memristive devices for upcoming neuromorphic sensing and computing systems.