Litcius/Paper detail

Layering and subpool exploration for adaptive variational quantum eigensolvers: Reducing circuit depth, runtime, and susceptibility to noise

Christopher K. Long, Kieran Dalton, C. H. W. Barnes, David R. M. Arvidsson-Shukur, Normann Mertig

2024Physical review. A/Physical review, A10 citationsDOIOpen Access PDF

Abstract

Adaptive variational quantum eigensolvers (ADAPT-VQEs) are promising candidates for simulations of strongly correlated systems on near-term quantum hardware. To further improve the noise resilience of these algorithms, recent efforts have been directed towards compactifying, or , their circuits. Here, we broaden the understanding of the algorithmic layering process in three ways. First, we investigate the noncommutation relations between the different elements that are used to build ADAPT-VQE . In doing so, we develop a framework for studying and developing layering algorithms, which produce shallower circuits. Second, based on this framework, we develop a new subroutine that can reduce the number of quantum-processor calls by optimizing the selection procedure with which a variational quantum algorithm appends elements. Third, we provide a thorough numerical investigation of the noise-resilience improvement available via layering the circuits of ADAPT-VQE algorithms. We find that layering leads to an improved noise resilience with respect to amplitude-damping and dephasing noise, which, in general, affect idling and nonidling qubits alike. With respect to depolarizing noise, which tends to affect only actively manipulated qubits, we observe no advantage of layering. Published by the American Physical Society 2024

Topics & Concepts

AnsatzNoise (video)Computer scienceQubitLayeringQuantumDephasingQuantum computerAlgorithmTheoretical computer scienceTopology (electrical circuits)PhysicsArtificial intelligenceQuantum mechanicsEngineeringElectrical engineeringImage (mathematics)BiologyBotanyQuantum Computing Algorithms and ArchitectureQuantum Information and CryptographyQuantum and electron transport phenomena