Effect of thickness scaling on the switching dynamics of ferroelectric HfO2–ZrO2 capacitors
Yue Peng, Zhe Wang, Wenwu Xiao, Yu Ma, Fenning Liu, Xinran Deng, Xiao Yu, Yan Liu, Genquan Han, Yue Hao
Topics & Concepts
FerroelectricityMaterials scienceCapacitorCoercivityDielectricOptoelectronicsFerroelectric RAMNon-volatile memoryPolarization (electrochemistry)Switching timeTransistorField-effect transistorCondensed matter physicsElectrical engineeringVoltageChemistryEngineeringPhysical chemistryPhysicsFerroelectric and Negative Capacitance DevicesAdvanced Memory and Neural ComputingFerroelectric and Piezoelectric Materials