Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3
E. Chikoidze, Tamar Tchelidze, Corinne Sartel, Zeyu Chi, Riad Kabouche, Ismail Madaci, Carlos García-Rubio, Hagar Mohamed, Vincent Sallet, Farid Medjdoub, Amador Pérez‐Tomás, Yves Dumont
Topics & Concepts
Materials scienceSemiconductorDopingDopantBand gapWide-bandgap semiconductorElectric fieldImpact ionizationOptoelectronicsCondensed matter physicsImpurityIonizationIonChemistryPhysicsOrganic chemistryQuantum mechanicsGa2O3 and related materialsAdvanced Photocatalysis TechniquesZnO doping and properties