High-temperature memory devices based on ferroelectric ScAlN/AlGaN/GaN high-electron-mobility transistors
Jie Zhang, Jiangnan Liu, Daphne Agapiou, Md. Tanvir Hasan, Ding Wang, Shubham Mondal, Yuyang Chen, Kai Sun, Zetian Mi
Topics & Concepts
Materials scienceOptoelectronicsTransistorInduced high electron mobility transistorHigh-electron-mobility transistorElectrical engineeringVoltageEngineeringAcoustic Wave Resonator TechnologiesFerroelectric and Negative Capacitance DevicesFerroelectric and Piezoelectric Materials