Giant magnetoresistance and tunneling electroresistance in multiferroic tunnel junctions with 2D ferroelectrics
Yancong Chen, Zhiyuan Tang, Minzhi Dai, Xin Luo, Yue Zheng
Abstract
layer, leading to multiple tunneling resistance states. The tunneling magnetoresistance (TMR) and electroresistance (TER) of MFTJs are enhanced by the inserted h-BN layer, achieving an ON/OFF TER ratio of 4188% as well as a TMR ratio of 581% with a much lower resistance area. The giant tunneling resistance ratio, multiple resistance states, and ultra-low energy consumption in 2D FE-based MFTJs suggest their great potential in non-destructive non-volatile memories.
Topics & Concepts
Materials scienceQuantum tunnellingMagnetoresistanceCondensed matter physicsFerroelectricityMultiferroicsPolarization (electrochemistry)MagnetizationElectrodeOptoelectronicsMagnetic fieldDielectricPhysicsChemistryQuantum mechanicsPhysical chemistry2D Materials and ApplicationsMultiferroics and related materialsPerovskite Materials and Applications