Hf-doped ZnO transistor with high bias stability and high field-effect mobility by modulation of oxygen vacancies and interfaces
Yushu Tang, Pengwei Tan, Yuanyuan Luo, Zheng Zhang, Liyang Luo, Guotao Duan
Topics & Concepts
Materials scienceThreshold voltageThin-film transistorOptoelectronicsDopingAnnealing (glass)Atomic layer depositionSubthreshold swingTransistorField effectHigh-κ dielectricElectron mobilityDielectricLayer (electronics)NanotechnologyVoltageElectrical engineeringEngineeringComposite materialThin-Film Transistor TechnologiesZnO doping and propertiesGa2O3 and related materials