Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films
Dong Hyun Lee, Geun Taek Yu, Ju Yong Park, Se Hyun Kim, Kun Yang, Geun Hyeong Park, Jin Ju Ryu, Je In Lee, Gun Hwan Kim, Min Hyuk Park
Topics & Concepts
Materials scienceFerroelectricityImpurityKineticsNucleationPolarization (electrochemistry)Thin filmSwitching timeNanotechnologyOptoelectronicsThermodynamicsPhysical chemistryDielectricChemistryOrganic chemistryPhysicsQuantum mechanicsFerroelectric and Negative Capacitance DevicesMXene and MAX Phase MaterialsAdvanced Memory and Neural Computing