Elimination of Domain Boundaries Accelerates Diffusion in MOFs by an Order of Magnitude: Monolithic Metal‐Organic Framework Thin Films Epitaxially Grown on Si(111) Substrates
Peter Thissen, Jonas Wohlgemuth, Peter G. Weidler, Detlef‐M. Smilgies, Lars Heinke, Nils Schewe, Meike Koenig, Peter Krolla, Christof Wöll
Abstract
Abstract Many properties of the emerging class of metal‐organic frameworks (MOFs) depend crucially on defect concentrations, as in case of other solids. In order to provide reference systems with nearly perfect structure and low defect density, a procedure to grow MOFs epitaxially on cm‐sized Si(111) single crystals is developed. The crystalline metal‐organic thin films are in high registry with the substrate's crystal lattice, as demonstrated by synchrotron‐based grazing incidence X‐ray diffraction (GI‐XRD) experiments. The corresponding reduction of MOF defect density is shown to have striking effects on the properties of these porous frameworks. The most pronounced difference concerns mass transport. An increase in the diffusion coefficient of guest molecules by one order of magnitude relative to the same MOF materials with normal defect densities is observed.