Axis dependent conduction polarity in the air-stable semiconductor, PdSe<sub>2</sub>
Ryan A. Nelson, Ziling Deng, Andrew M. Ochs, Karl G. Koster, Cullen T. Irvine, Joseph P. Heremans, Wolfgang Windl, Joshua E. Goldberger
Abstract
exhibits p-type conduction in the cross-plane direction and n-type conduction along the in-plane directions above an onset temperature of 100-200 K that varies with doping level. Lightly p-doped samples show p-type thermopower in all directions at low temperatures, but above ∼360 K the in-plane thermopower turns negative. Density functional theory calculations indicate that the origin of ADCP arises from the complementary effective mass anisotropies in the valence and conduction bands in this material, which facilitate hole transport in the cross-plane direction, and electron transport along the in-plane directions. ADCP occurs at temperatures with sufficient thermal population of both carrier types to overcome the extrinsic doping levels to exploit the effective mass anisotropy. In total, the development of this stable semiconductor in which thermally or optically excited holes and electrons inherently migrate along different directions opens up numerous potential applications in a multitude of technologies.