Extremely large magnetoresistance in high-mobility <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">SrNbO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi mathvariant="normal">SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> heterostructures
Jie Zhang, Jong Mok Ok, Yun‐Yi Pai, Jason Lapano, Elizabeth Skoropata, Alessandro R. Mazza, Haoxiang Li, Amanda Huon, Sangmoon Yoon, Benjamin J. Lawrie, Matthew Brahlek, Thomas Z. Ward, Gyula Eres, H. Miao, Ho Nyung Lee
Abstract
An extremely large linear magnetoresistance (LMR) is a ubiquitous phenomenon emerging from topological Dirac and Weyl semimetals. However, the connection between an LMR and a nontrivial topology is under extensive debate. In this paper, by precisely controlling the thickness of ${\mathrm{SrNbO}}_{3}$ thin films grown on ${\mathrm{SrTiO}}_{3}$ substrates, we observe an LMR over a large carrier density range with a magnetoresistance as high as $150\phantom{\rule{0.16em}{0ex}}000%$ at a carrier density $n\ensuremath{\sim}{10}^{21}\phantom{\rule{0.28em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$, far away from the quantum-limit regime. The temperature-, magnetic-field-, and carrier-density-dependent LMR in ${\mathrm{SrNbO}}_{3}/{\mathrm{SrTiO}}_{3}$ heterostructures provides compelling evidence of a mobility-driven LMR in coherent electronic systems. Our results uncover the general principle of an LMR and shed light on proper categorization of transport properties in topological and correlated materials.