Reliability study on deep-ultraviolet photodetectors based on ZnGa2O4 epilayers grown by MOCVD
Ray-Hua Horng, Peng-Hsuan Huang, Yun-Sheng Li, Fu-Gow Tarntair, Chih‐Shan Tan
Topics & Concepts
PassivationMaterials scienceMetalorganic vapour phase epitaxyOptoelectronicsPhotodetectorUltravioletX-ray photoelectron spectroscopySchottky barrierReliability (semiconductor)Layer (electronics)NanotechnologyEpitaxyChemical engineeringDiodeQuantum mechanicsPhysicsEngineeringPower (physics)Ga2O3 and related materialsZnO doping and propertiesThin-Film Transistor Technologies