Construction of Dual‐tight Contact Interface in Z‐scheme System of In<sub>2</sub>O<sub>3</sub>/O<sub>V</sub>/In<sub>2</sub>S<sub>3</sub> for Enhancing Photocatalytic Performance
Linlin Wang, Lulu Zhang, Hongwen Zhang, Na Li, Shuao Zhu, Wenjuan Li, Weiguang Ran, Zhihong Jing, Tingjiang Yan
Abstract
Abstract The novel Z‐scheme photocatalytic system of In 2 O 3 /O V /In 2 S 3 has been obtained by a facile two‐step in situ deposition method, where oxygen vacancies and In 2 S 3 are in situ located on the surface of In 2 O 3 in sequence. In such a photocatalytic system, oxygen vacancy anchored tightly on the surface of In 2 O 3 serves as an electron mediator, efficiently extracting electrons from In 2 O 3 and modulating the electron transfer paths to facilize constructing a Z‐scheme system. Due to the presence of another tight contact interface between the In 2 O 3 and In 2 S 3 , the transfer rate of electrons from In 2 O 3 to In 2 S 3 can be further accelerated. Therefore, the synergistic effect of the above‐mentioned dual‐tight contact interface over In 2 O 3 /O V /In 2 S 3 Z‐scheme system simultaneously enhances the charge separation and transfer, resulting in the high performance of photocatalytic H 2 evolution.