Tailoring Zr-vacancy induces superior thermoelectric performance of Hf-free ZrCoSb-based half-Heusler compounds
Shuyue Tan, Lifeng Jiang, Saichao Cao, Donghu Zhou, Hongrui Li, Huijun Kang, Rongchun Chen, Zongning Chen, Enyu Guo, Pengfei Yu, Mingxu Xia, Tongmin Wang
Topics & Concepts
Materials scienceVacancy defectThermoelectric effectThermoelectric materialsOptoelectronicsMetallurgyCondensed matter physicsEngineering physicsComposite materialThermodynamicsThermal conductivityEngineeringPhysicsAdvanced Thermoelectric Materials and DevicesHeusler alloys: electronic and magnetic propertiesChalcogenide Semiconductor Thin Films