High-power laser diode at 9xx nm with 81.10% efficiency
Liang Wang, Hongwei Qu, Aiyi Qi, Xuyan Zhou, Wanhua Zheng
Abstract
In this study, a low-resistance, low-loss, continuously gradual composition extreme double asymmetric (CGC-EDAS) epitaxial structure is designed to improve efficiency. The structure and facet reflectivity of the broad area (BA) lasers are optimized to maximize the power conversion efficiency (PCE). In the experiment, the peak PCE of 75.36% is measured at 25°C. At 0°C, a peak PCE of 81.10% is measured and the PCE can still reach 77.84% at an output power of 17.10 W, which, to the best of our knowledge, is the highest value to date for any BA lasers.
Topics & Concepts
Energy conversion efficiencyMaterials scienceOpticsLaserDiodeSemiconductor laser theoryOptoelectronicsSlope efficiencyPower (physics)Facet (psychology)Fiber laserPhysicsSocial psychologyBig Five personality traitsPsychologyPersonalityQuantum mechanicsSolid State Laser TechnologiesSemiconductor Lasers and Optical DevicesSemiconductor Quantum Structures and Devices