A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch
Sheng-Hsi Hung, Tz-Wun Wang, Siyi Li, Wei‐Chien Hung, Ya-Ting Hsu, Ke‐Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai
Abstract
This article proposes a gallium nitride (GaN)-based isolated silicon carbide (SiC) MOSFET gate driver with an on-chip metal–insulator–metal (MIM) capacitor that has high data rate and low propagation delay. The improved common-mode transient immunity (CMTI) envelope detection technique eliminates the common-mode current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{\mathrm{CM}})$</tex-math> </inline-formula> to improve the CMTI. In addition, the proposed isolated gate driver (IGD) with quad-drive control (QDC) technique reduces power loss and gate ringing effect. Experimental results show that the proposed IGD can achieve a slew rate of 109 kV/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula> s. At a switching frequency of 100 kHz, the efficiency of the half-bridge isolated dc–dc converter can be kept higher than 90% when <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm{IN}}$</tex-math> </inline-formula> changes from 800 to 1700 V, and the peak efficiency is 98.6% when <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm{IN}}$</tex-math> </inline-formula> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$=$</tex-math> </inline-formula> 800 V.