Ultrafast and stable phase transition realized in MoTe <sub>2</sub> -based memristive devices
Hui‐Kai He, Yong-Bo Jiang, Jun Yu, Ziyan Yang, Chaofan Li, Ting-Ze Wang, Dequan Dong, Fuwei Zhuge, Ming Xu, Zhiyi Hu, Rui Yang, Xiangshui Miao
Abstract
An electric-field induced phase transition between semiconducting 2H and metallic 1T′ phases in a MoTe 2 device is demonstrated for the first time. The phase transition exhibits faster switching compared with phase-change random-access memory (PCRAM), and shows more controllable switching than conventional memristive devices.
Topics & Concepts
Materials sciencePhase transitionUltrashort pulseElectric fieldNucleationOptoelectronicsResistive touchscreenPhase (matter)Transition metalChemical physicsCondensed matter physicsRaman spectroscopyNanotechnologyLaserElectrical engineeringChemistryThermodynamicsOpticsPhysicsEngineeringCatalysisOrganic chemistryBiochemistryQuantum mechanicsAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsFerroelectric and Negative Capacitance Devices