Realization of AlSb in the Double-Layer Honeycomb Structure: A Robust Class of Two-Dimensional Material
Le Qin, Zhihao Zhang, Zeyu Jiang, Kai Fan, Wenhao Zhang, Qiao-Yin Tang, Huinan Xia, Fanqi Meng, Qinghua Zhang, Lin Gu, Damien West, Shengbai Zhang, Ying‐Shuang Fu
Abstract
Exploring two-dimensional (2D) van der Waals (vdW) systems is at the forefront of materials of physics. Here, through molecular beam epitaxy on graphene-covered SiC(0001), we report successful growth of AlSb in the double-layer honeycomb (DLHC) structure, a 2D vdW material which has no direct analogue to its 3D bulk and is predicted to be kinetically stable when freestanding. The structural morphology and electronic structure of the experimental 2D AlSb are characterized with spectroscopic imaging scanning tunneling microscopy and cross-sectional imaging scanning transmission electron microscopy, which compare well to the proposed DLHC structure. The 2D AlSb exhibits a band gap of 0.93 eV versus the predicted 1.06 eV, which is substantially smaller than the 1.6 eV of bulk. We also attempt the less-stable InSb DLHC structure; however, it grows into bulk islands instead. The successful growth of a DLHC material here demonstrates the feasibility for the realization of a large family of 2D DLHC traditional semiconductors with characteristic excitonic, topological, and electronic properties.