Direct Band Gap AlGaAs Wurtzite Nanowires
Daniele Barettin, I. V. Shtrom, R. R. Reznik, С. В. Микушев, G. É. Cirlin, Matthias Auf der Maur, N. Akopian
Abstract
Wurtzite AlGaAs is a technologically promising yet unexplored material. Here we study it both experimentally and numerically. We develop a complete numerical model based on an 8-band k → · p → method, including electromechanical fields, and calculate the optoelectronic properties of wurtzite AlGaAs nanowires with different Al content. We then compare them with our experimental data. Our results strongly suggest that wurtzite AlGaAs is a direct band gap material. Moreover, we have also numerically obtained the band gap of wurtzite AlAs and the valence band offset between AlAs and GaAs in the wurtzite symmetry.
Topics & Concepts
Wurtzite crystal structureNanowireBand gapMaterials scienceNanotechnologyOptoelectronicsCondensed matter physicsChemistryCrystallographyPhysicsHexagonal crystal systemNanowire Synthesis and ApplicationsGaN-based semiconductor devices and materialsSemiconductor materials and interfaces