Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer
Xue Peng, Yanfei Lv, Li Fu, Fei Chen, Weitao Su, Jingzhou Li, Qi Zhang, Shichao Zhao
Abstract
P can emit near-infrared light at 750 nm. We show that the annealing and the presence of cuprous oxide can enhance the PL emission. The mechanism of the PL enhancement is the improvement of crystal quality and the formation of a space charge region. Our results provide a reference for improving the PL properties of p-type semiconductors.
Topics & Concepts
PhotoluminescenceMaterials scienceAnnealing (glass)PhosphideCopperOxideIndium phosphideOptoelectronicsSemiconductorInorganic chemistryMetallurgyChemistryMetalGallium arsenideCopper-based nanomaterials and applicationsNanocluster Synthesis and ApplicationsZnO doping and properties